Invention Grant
- Patent Title: Semiconductor memory device having pre-emphasis signal generator
- Patent Title (中): 具有预加重信号发生器的半导体存储器件
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Application No.: US11429296Application Date: 2006-05-05
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Publication No.: US07391238B2Publication Date: 2008-06-24
- Inventor: Hyun-Jin Kim , Kwang-Il Park , Woo-Jin Lee
- Applicant: Hyun-Jin Kim , Kwang-Il Park , Woo-Jin Lee
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2005-0039717 20050512; KR10-2006-0002380 20060109
- Main IPC: H03K19/094
- IPC: H03K19/094 ; H03K19/0175

Abstract:
A semiconductor memory device includes a primary output driver which outputs a data signal through an output terminal; a secondary output driver which is connected to the output terminal and performs a pre-emphasis operation; and a pre-emphasis signal generator which outputs a pre-emphasis signal to enable the secondary output driver The pre-emphasis signal generator includes a auto pulse generator which generates an auto pulse in response to a transition of a control signal; a delay circuit which receives the auto pulse output from the auto pulse generator, delays the auto pulse by a predetermined period, and outputs a pre-emphasis signal; and a delay control unit which applies a delay control signal to the delay circuit and controls a delay amount of the delay circuit.
Public/Granted literature
- US20060255829A1 Semiconductor memory device having pre-emphasis signal generator Public/Granted day:2006-11-16
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