Invention Grant
- Patent Title: Multi-layered magnetic memory structures
- Patent Title (中): 多层磁记忆体结构
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Application No.: US11285991Application Date: 2005-11-23
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Publication No.: US07391641B2Publication Date: 2008-06-24
- Inventor: Manish Sharma , Lung Tran , Thomas C. Anthony
- Applicant: Manish Sharma , Lung Tran , Thomas C. Anthony
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic separating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic separating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.
Public/Granted literature
- US20070115718A1 Multi-layered magnetic memory structures Public/Granted day:2007-05-24
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