发明授权
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
-
申请号： US10793909申请日： 2004-03-08
-
公开(公告)号： US07393723B2公开(公告)日： 2008-07-01
- 发明人: Shunpei Yamazaki , Mitsunori Sakama , Takeshi Fukada
- 申请人： Shunpei Yamazaki , Mitsunori Sakama , Takeshi Fukada
- 申请人地址： JP Atsugi-shi, Kanagwa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagwa-ken
- 代理机构： Fish & Richardson P.C.
- 优先权： JP7-256968 19950908; JP7-262520 19950916
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.
公开/授权文献
- US20040256993A1 Method of manufacturing a semiconductor device 公开/授权日：2004-12-23
信息查询
IPC分类:
