发明授权
- 专利标题： Method of measuring a surface voltage of an insulating layer
- 专利标题（中）： 测量绝缘层的表面电压的方法
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申请号： US11461312申请日： 2006-07-31
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公开(公告)号： US07394279B2公开(公告)日： 2008-07-01
- 发明人: Mi-Sung Lee , Yu-Sin Yang , Chung-Sam Jun , Byung-Sug Lee
- 申请人： Mi-Sung Lee , Yu-Sin Yang , Chung-Sam Jun , Byung-Sug Lee
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Marger Johnson & McCollom, P.C.
- 优先权： KR10-2005-0069954 20050730
- 主分类号： G01R31/26
- IPC分类号： G01R31/26 ; G01R19/00 ; G01R31/08
摘要：
In a method of measuring a surface voltage of an insulating layer, the number of times that surface voltages are measured in a depletion region increases so that precise data about the depletion region may be obtained. The number of times that the surface voltages are measured in an accumulation region and an inversion region decreases so that the data about the depletion region may be rapidly obtained.
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