Invention Grant
- Patent Title: Multi-port semiconductor memory device and method for accessing and refreshing the same
- Patent Title (中): 多端口半导体存储器件及其访问和刷新方法
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Application No.: US11616846Application Date: 2006-12-27
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Publication No.: US07394711B2Publication Date: 2008-07-01
- Inventor: Chi-Sung Oh , Ho-Cheol Lee , Nam-Jong Kim
- Applicant: Chi-Sung Oh , Ho-Cheol Lee , Nam-Jong Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Marger Johnson & McCollom, P.C.
- Priority: KR10-2005-0127818 20051222
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor memory device and a method therefor for changing an access right to access a shared memory area according to an external command and a refresh mode is provided. In one embodiment, the semiconductor memory device includes a plurality of input/output ports for inputting command signals for first or second mode refresh operation, a memory array divided into a plurality of different memory areas including a shared memory area that is accessible via at least two of the plurality of input/output ports, and a grant control block for assigning an access right to access the shared memory area in response to an external command signal. The grant control block may also generate grant control signals for preferentially assigning the access right to access the shared memory area to the input/output port for inputting the command signals for the first mode refresh operation.
Public/Granted literature
- US20070171755A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD THEREFOR Public/Granted day:2007-07-26
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