发明授权
US07394714B2 Circuit implementation of a dynamic power supply for SRAM core array
有权
SRAM核心阵列的动态电源的电路实现
- 专利标题： Circuit implementation of a dynamic power supply for SRAM core array
- 专利标题（中）： SRAM核心阵列的动态电源的电路实现
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申请号： US11516994申请日： 2006-09-07
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公开(公告)号： US07394714B2公开(公告)日： 2008-07-01
- 发明人: Wesley Lin , Jhon-Jhy Liaw , Fang-Shi Jordan Lai , Chia-Fu Lee
- 申请人： Wesley Lin , Jhon-Jhy Liaw , Fang-Shi Jordan Lai , Chia-Fu Lee
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Kirkpatrick & Lockhart Preston Gates Ellis LLP
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A SRAM device includes at least one memory cell having a source line for receiving an internal supply power, and a voltage management circuit coupled to the source line for generating the internal supply power that varies in at least two different voltage levels, depending on various operation modes of the memory cell.
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