发明授权
- 专利标题: Segmented resist islands for photolithography on single sliders
- 专利标题(中): 在单个滑块上用于光刻的分段抗蚀岛
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申请号: US10928038申请日: 2004-08-27
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公开(公告)号: US07396636B2公开(公告)日: 2008-07-08
- 发明人: Cherngye Hwang , Kim Y. Lee , Dennis R. McKean , Gary Suzuki
- 申请人: Cherngye Hwang , Kim Y. Lee , Dennis R. McKean , Gary Suzuki
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands, B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands, B.V.
- 当前专利权人地址: NL Amsterdam
- 主分类号: G03F7/00
- IPC分类号: G03F7/00
摘要:
A method for creating segmented resist islands for photolithography on single sliders is disclosed. The method includes ramping the temperature of a number of single sliders, to a temperature that is below a proper softbake temperature. The single sliders reside in a divider and the single sliders and walls of the divider have a layer of resist deposited on them. Coarse lithography is then performed to remove the resist from above portions of the walls of the divider; and the temperature of the single sliders, the resist and the divider is then ramped to a proper softbake temperature.
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