发明授权
- 专利标题： Method of forming a MOS transistor
- 专利标题（中）： 形成MOS晶体管的方法
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申请号： US11278434申请日： 2006-04-03
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公开(公告)号： US07396717B2公开(公告)日： 2008-07-08
- 发明人: Hsiang-Ying Wang , Chin-Cheng Chien , Tsai-Fu Hsiao , Ming-Yen Chien , Chao-Chun Chen
- 申请人： Hsiang-Ying Wang , Chin-Cheng Chien , Tsai-Fu Hsiao , Ming-Yen Chien , Chao-Chun Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Winston Hsu
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, Chd xHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.
公开/授权文献
- US20070238234A1 Method of forming a MOS transistor 公开/授权日：2007-10-11
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