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公开(公告)号：US20070228464A1
公开(公告)日：2007-10-04
申请号：US11748479
申请日：2007-05-14
IPC分类号： H01L29/772
CPC分类号： H01L21/26506 , H01L21/2658 , H01L29/6659
摘要： A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, CxHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.
摘要翻译： 一种形成MOS晶体管的方法，其中执行共注入以将注入植入源区域和漏区域或晕圈注入区域中，以有效地防止掺杂剂在源区和漏区中的过度扩散或 用于获得良好的接合曲线并改善短沟道效应。 植入物包括碳，烃或烃的衍生物，例如选自C，C≡H，H +和/或C（C） 其中x为1〜10的数，y为4〜20的数，n为1〜10的数，n为0〜 数量为1〜1000。
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公开(公告)号：US07795101B2
公开(公告)日：2010-09-14
申请号：US12701612
申请日：2010-02-08
IPC分类号： H01L21/336
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/26586 , H01L29/6659
摘要： A method of forming a MOS transistor, in which, a co-implantation is performed to implant a carbon co-implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect, and the carbon co-implant is from a precursor comprising CO or CO2.
摘要翻译： 一种形成MOS晶体管的方法，其中进行共同注入以将碳共注入物注入到源极区域和漏极区域或晕圈注入区域中，以有效地防止掺杂剂在源区域中过度扩散，并且 漏极区域或晕圈注入区域，以获得良好的连接曲线并改善短沟道效应，并且碳共植入物来自包含CO或CO 2的前体。
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公开(公告)号：US07396717B2
公开(公告)日：2008-07-08
申请号：US11278434
申请日：2006-04-03
IPC分类号： H01L21/8238
CPC分类号： H01L21/2658 , H01L21/26506 , H01L29/6659
摘要： A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, Chd xHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.
摘要翻译： 一种形成MOS晶体管的方法，其中执行共注入以将注入植入源区域和漏区域或晕圈注入区域中，以有效地防止掺杂剂在源区和漏区中的过度扩散或 用于获得良好的接合曲线并改善短沟道效应。 植入物包括碳，烃或烃的衍生物，例如选自C，Chd x H y O，O +和/或C（C 其中x为1〜10的数，y为4〜4的数，n为0〜 20，n为1〜1000的数。
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公开(公告)号：US20100144110A1
公开(公告)日：2010-06-10
申请号：US12701612
申请日：2010-02-08
IPC分类号： H01L21/265
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/26586 , H01L29/6659
摘要： A method of forming a MOS transistor, in which, a co-implantation is performed to implant a carbon co-implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect, and the carbon co-implant is from a precursor comprising CO or CO2.
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公开(公告)号：US20080258178A1
公开(公告)日：2008-10-23
申请号：US12127787
申请日：2008-05-27
IPC分类号： H01L29/93 , H01L21/8238
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/2658 , H01L21/26586 , H01L29/6659
摘要： A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of CO, CO2, CxHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of to 1000.
摘要翻译： 一种形成MOS晶体管的方法，其中执行共注入以将注入植入源区域和漏区域或晕圈注入区域中，以有效地防止掺杂剂在源区和漏区中的过度扩散或 用于获得良好的接合曲线并改善短沟道效应。 植入物包括碳，烃或烃的衍生物，例如选自CO，CO 2 CO 2，C x H y ＆lt; / SUB＆gt;＆lt; SUP＆gt; +＆lt; / SUP＆gt;和（C＆lt; x＆lt; H＆gt; 其中，x为1〜10的数，y为4〜20的数，n为1000的数。
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公开(公告)号：US20070238234A1
公开(公告)日：2007-10-11
申请号：US11278434
申请日：2006-04-03
IPC分类号： H01L21/8234 , H01L29/76
CPC分类号： H01L21/2658 , H01L21/26506 , H01L29/6659
摘要： A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, CxHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.
摘要翻译： 一种形成MOS晶体管的方法，其中执行共注入以将注入植入源区域和漏区域或晕圈注入区域中，以有效地防止掺杂剂在源区和漏区中的过度扩散或 用于获得良好的接合曲线并改善短沟道效应。 植入物包括碳，烃或烃的衍生物，例如选自C，C H，H，O，O， SUP＆gt;和（C x H x H y）其中x是1至10的数 y为4〜20的数，n为1〜1000的数。
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