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US07397079B2 Non-volatile memory device and methods of forming the same 失效
非易失性存储器件及其形成方法

Non-volatile memory device and methods of forming the same
Abstract:
A non-volatile memory device includes a control gate electrode disposed on a substrate with a first insulation layer interposed therebetween and a floating gate disposed in a hole exposing substrate through the control gate electrode and the first insulation layer. A second insulation layer is interposed between the floating gate and the substrate, and between the floating gate and the control gate.
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