Invention Grant
- Patent Title: Non-volatile memory device and methods of forming the same
- Patent Title (中): 非易失性存储器件及其形成方法
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Application No.: US11245527Application Date: 2005-10-07
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Publication No.: US07397079B2Publication Date: 2008-07-08
- Inventor: Yong-Suk Choi , Seung-Beom Yoon , Yong-Tae Kim , Jin-Woo Kim
- Applicant: Yong-Suk Choi , Seung-Beom Yoon , Yong-Tae Kim , Jin-Woo Kim
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC.
- Priority: KR10-2004-0080524 20041008
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/788 ; H01L21/8238

Abstract:
A non-volatile memory device includes a control gate electrode disposed on a substrate with a first insulation layer interposed therebetween and a floating gate disposed in a hole exposing substrate through the control gate electrode and the first insulation layer. A second insulation layer is interposed between the floating gate and the substrate, and between the floating gate and the control gate.
Public/Granted literature
- US20060079054A1 Non-volatile memory device and methods of forming the same Public/Granted day:2006-04-13
Information query
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