发明授权
US07397121B2 Semiconductor chip with post-passivation scheme formed over passivation layer
有权
具有钝化方案的半导体芯片形成在钝化层上
- 专利标题： Semiconductor chip with post-passivation scheme formed over passivation layer
- 专利标题（中）： 具有钝化方案的半导体芯片形成在钝化层上
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申请号： US11262184申请日： 2005-10-28
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公开(公告)号： US07397121B2公开(公告)日： 2008-07-08
- 发明人: Chiu-Ming Chou , Chien-Kang Chou , Ching-San Lin , Mou-Shiung Lin , Hsin-Jung Lo
- 申请人： Chiu-Ming Chou , Chien-Kang Chou , Ching-San Lin , Mou-Shiung Lin , Hsin-Jung Lo
- 申请人地址： TW Hsin-Chu
- 专利权人： Megica Corporation
- 当前专利权人： Megica Corporation
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
The invention provides a semiconductor chip comprising an interconnecting structure over said passivation layer. The interconnecting structure comprises a first contact pad connected to a second contact pad exposed by an opening in a passivation layer. A metal bump is on the first contact pad and over multiple semiconductor devices, wherein the metal bump has more than 50 percent by weight of gold and has a height of between 8 and 50 microns.