Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US11526612Application Date: 2006-09-26
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Publication No.: US07397282B2Publication Date: 2008-07-08
- Inventor: Hiroyuki Mizuno , Koichiro Ishibashi , Masayuki Miyazaki
- Applicant: Hiroyuki Mizuno , Koichiro Ishibashi , Masayuki Miyazaki
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP8-314506 19961126; JP8-349427 19961227
- Main IPC: H03K3/01
- IPC: H03K3/01

Abstract:
A semiconductor integrated circuit device which includes a logical circuit containing a MIS transistor on a semiconductor substrate, a control circuit for controlling a threshold voltage of the MIS transistor in the logical circuit, an oscillation circuit containing a MIS transistor on the semiconductor substrate, and a buffer circuit, the control circuit compares the frequency of the oscillation output and frequency of a clock signal to output a first control signal, the first control signal controls a threshold voltage of the MIS transistor of the oscillation circuit, and the buffer circuit is inputted with the first control signal to output a second control signal corresponding to the first control signal, the second control signal controlling the threshold voltage of the MIS transistor of the logical circuit.
Public/Granted literature
- US20070063735A1 Semiconductor integrated circuit device Public/Granted day:2007-03-22
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