发明授权
- 专利标题: Method of fabricating organic field effect transistors
- 专利标题(中): 制造有机场效应晶体管的方法
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申请号: US11102166申请日: 2005-04-08
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公开(公告)号: US07399656B2公开(公告)日: 2008-07-15
- 发明人: Jie Zhang , Paul W. Brazis , Daniel R. Gamota , Krishna Kalyanasundaram , Min-Xian M. Zhang
- 申请人: Jie Zhang , Paul W. Brazis , Daniel R. Gamota , Krishna Kalyanasundaram , Min-Xian M. Zhang
- 申请人地址: US IL Schaumburg
- 专利权人: Motorola, Inc.
- 当前专利权人: Motorola, Inc.
- 当前专利权人地址: US IL Schaumburg
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Organic field effect transistors (OFETs) can be created rapidly and at low cost on organic films by using a multilayer film (202) that has an electrically conducting layer (204, 206) on each side of a dielectric core. The electrically conducting layer is patterned to form gate electrodes (214), and a polymer film (223) is attached onto the gate electrode side of the multilayer dielectric film, using heat and pressure (225) or an adhesive layer (228). A source electrode and a drain electrode (236) are then fashioned on the remaining side of the multilayer dielectric film, and an organic semiconductor (247) is deposited over the source and drain electrodes, so as to fill the gap between the source and drain electrodes and touch a portion of the dielectric film to create an organic field effect transistor.
公开/授权文献
- US20050176196A1 Method of fabricating organic field effect transistors 公开/授权日:2005-08-11
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