Invention Grant
- Patent Title: In situ application of etch back for improved deposition into high-aspect-ratio features
- Patent Title (中): 回蚀刻的原位应用可以改善沉积到高纵横比特征
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Application No.: US11036632Application Date: 2005-01-13
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Publication No.: US07399707B2Publication Date: 2008-07-15
- Inventor: Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Santiago Cox , Shamouil Shamouilian
- Applicant: Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Santiago Cox , Shamouil Shamouilian
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Townsend and Townsend and Crew
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
Public/Granted literature
- US20050124166A1 In situ application of etch back for improved deposition into high-aspect-ratio features Public/Granted day:2005-06-09
Information query
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