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    Deposition process for high aspect ratio trenches
    2.
    发明授权
    Deposition process for high aspect ratio trenches 有权
    高宽比沟槽沉积工艺

    公开(公告)号：US07097886B2

    公开(公告)日：2006-08-29

    申请号：US10319827

    申请日：2002-12-13

    Applicant: Farhad K. Moghadam ,  Michael S. Cox ,  Padmanabhan Krishnaraj ,  Thanh N. Pham ,  Zhenjiang Cui

    Inventor： Farhad K. Moghadam ,  Michael S. Cox ,  Padmanabhan Krishnaraj ,  Thanh N. Pham ,  Zhenjiang Cui

    IPC: H05H1/24

    CPC classification number: H01J37/32082 ,  C23C16/045 ,  H01J2237/3327 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/76229

    Abstract: A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.

    Abstract translation: 一种在具有形成在两个相邻凸起特征之间的间隙的基底上沉积绝缘膜的方法。 该方法包括使用具有同时沉积和溅射部件的高密度等离子体工艺在衬底上和间隙中沉积绝缘膜的一部分，并使用原子层沉积在衬底上和间隙中沉积绝缘膜的另一部分 处理。 在一些实施例中，通过原子层沉积工艺沉积的膜的部分沉积在使用高密度等离子体CVD技术沉积的膜的部分上。 在其他实施例中，通过高密度等离子体CVD工艺沉积的膜的部分沉积在使用原子层沉积工艺沉积的膜的部分上。

    Remote plasma cleaning method for processing chambers
    6.
    发明授权
    Remote plasma cleaning method for processing chambers 失效
    用于处理室的远程等离子体清洗方法

    公开(公告)号：US06274058B1

    公开(公告)日：2001-08-14

    申请号：US09347236

    申请日：1999-07-02

    Applicant: Ravi Rajagopalan ,  Patricia M. Liu ,  Pravin K. Narwankar ,  Huyen Tran ,  Padmanabhan Krishnaraj ,  Alan Ablao ,  Tim Casper

    Inventor： Ravi Rajagopalan ,  Patricia M. Liu ,  Pravin K. Narwankar ,  Huyen Tran ,  Padmanabhan Krishnaraj ,  Alan Ablao ,  Tim Casper

    IPC: H05H100

    CPC classification number: H01J37/32862 ,  C23C16/4405 ,  C23C16/511 ,  C23C16/52 ,  H01J9/38 ,  H01J37/32192 ,  H01J37/32357 ,  Y10S438/905

    Abstract: A processing chamber cleaning method is described which utilizes microwave energy to remotely generate a reactive species to be used alone or in combination with an inert gas to remove deposits from a processing chamber. The reactive species can remove deposits from a first processing region at a first pressure and then remove deposits from a second processing region at a second pressure. Also described is a cleaning process utilizing remotely generated reactive species in a single processing region at two different pressures. Additionally, different ratios of reactive gas and inert gas may be utilized to improve the uniformity of the cleaning process, increase the cleaning rate, reduce recombination of reactive species and increase the residence time of reactive species provided to the processing chamber.

    Abstract translation: 描述了一种处理室清​​洁方法，其利用微波能量远程产生要单独使用或与惰性气体组合使用的反应物质以从处理室去除沉积物。 反应性物质可以在第一压力下从第一处理区域去除沉积物，然后在第二压力下从第二处理区域去除沉积物。 还描述了在两个不同压力下在单个处理区域中利用远程产生的活性物质的清洁方法。 此外，可以使用不同比例的反应气体和惰性气体来改善清洁过程的均匀性，提高清洗速率，减少活性物质的复合并增加提供给处理室的反应物种的停留时间。

    Gas distribution system for a CVD processing chamber
    7.
    发明授权
    Gas distribution system for a CVD processing chamber 有权
    用于CVD处理室的气体分配系统

    公开(公告)号：US6143078A

    公开(公告)日：2000-11-07

    申请号：US191364

    申请日：1998-11-13

    Applicant: Tetsuya Ishikawa ,  Padmanabhan Krishnaraj ,  Feng Gao ,  Alan W. Collins ,  Lily Pang

    Inventor： Tetsuya Ishikawa ,  Padmanabhan Krishnaraj ,  Feng Gao ,  Alan W. Collins ,  Lily Pang

    IPC: C23C16/455 ,  H01L21/00 ,  H01L21/31 ,  C23C16/00 ,  H05H1/00

    CPC classification number: H01L21/67017

    Abstract: The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface. The present invention also provides a method for depositing a film on a substrate comprising: providing a chemical vapor deposition chamber, introducing first gas through a first gas inlet at a first distance from an interior surface of the chamber, introducing a second gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first gas on the interior surface and generating a plasma of the processing gases. Alternatively, the first gas is introduced at a different angle from the second gas with respect to a substrate surface.

    Abstract translation: 本发明提供一种用于在基板上沉积膜的装置，包括处理室，设置在室内的基板支撑构件，第一气体入口，第二气体入口，等离子体发生器和排气。 第一气体入口从腔室的内表面提供第一距离的第一气体，并且第二气体入口提供第二距离离第二距离距离腔室内表面的第一距离。 因此，第二气体在室的内表面附近产生较高的分压，以显着地减少从第一气体到内表面的沉积。 本发明还提供了一种在衬底上沉积膜的方法，包括：提供化学气相沉积室，将第一气体通过第一距离腔室内表面的第一距离处的第一气体入口引入第二气体， 气体入口距离室的内表面第二距离，其中第二气体在室的内表面附近产生较高的分压，以防止从内表面上的第一气体沉积并产生处理气体的等离子体。 或者，第一气体相对于衬底表面以与第二气体不同的角度被引入。

    Gas Distribution System for Improved Transient Phase Deposition
    8.
    发明申请
    Gas Distribution System for Improved Transient Phase Deposition 审中-公开
    用于改进瞬态相沉积的气体分配系统

    公开(公告)号：US20080041821A1

    公开(公告)日：2008-02-21

    申请号：US11877502

    申请日：2007-10-23

    Applicant: Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer ,  Diana Gujer

    Inventor： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer ,  Diana Gujer

    IPC: C23F1/00

    CPC classification number: C23C16/4558

    Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

    Abstract translation: 本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。 在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。 气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。 多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。 多个孔流体耦合在第一通道和第二通道之间。 多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加 沿着第一通道测量的孔口和气体入口。

    Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications
    9.
    发明授权
    Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications 失效
    将二氧化锗和/或GeO2与二氧化硅的合金用于半导体电介质应用

    公开(公告)号：US07189639B2

    公开(公告)日：2007-03-13

    申请号：US11055141

    申请日：2005-02-10

    Applicant: Padmanabhan Krishnaraj ,  Michael S. Cox ,  Bruno Geoffrion ,  Srinivas D. Nemani

    Inventor： Padmanabhan Krishnaraj ,  Michael S. Cox ,  Bruno Geoffrion ,  Srinivas D. Nemani

    IPC: H01L21/4763 ,  H01L21/44

    CPC classification number: H01L21/76837 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/76224

    Abstract: A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.

    Abstract translation: 公开了一种用于在具有多个间隙的衬底上沉积电介质膜的方法，所述间隙形成在设置在高密度等离子体衬底处理室衬底中的相邻凸起表面之间。 在一个实施方案中，该方法包括将包含锗源，硅源和氧化剂的工艺气体流入衬底处理室; 形成具有来自工艺气体的同时沉积和溅射组分的高密度等离子体，以沉积包含硅，锗和氧的电介质膜; 并且在形成高密度等离子体的步骤期间，将基板处理室内的压力保持在小于100mTorr，同时允许电介质膜被加热到其玻璃化转变温度以上。

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