发明授权
- 专利标题： Conductive memory device with conductive oxide electrodes
- 专利标题（中）： 具有导电氧化物电极的导电存储器件
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申请号： US11405958申请日： 2006-04-18
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公开(公告)号： US07400006B1公开(公告)日： 2008-07-15
- 发明人: Darrell Rinerson , Steve Kuo-Ren Hsia , Wayne Kinney , Steven W. Longcor
- 申请人： Darrell Rinerson , Steve Kuo-Ren Hsia , Wayne Kinney , Steven W. Longcor
- 专利权人： Unity Semiconductor Corporation
- 当前专利权人： Unity Semiconductor Corporation
- 主分类号： H01L31/062
- IPC分类号： H01L31/062
摘要：
A multi-resistive state element that uses barrier electrodes is provided. If certain materials are used as electrodes, the electrodes can be used for multiple purposes. Oxides and nitrides are especially well suited for acting as a barrier layer, and possibly even an adhesion layer and a sacrificial layer.
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