Invention Grant
- Patent Title: Nano-VCSEL device and fabrication thereof using nano-colonnades
- Patent Title (中): 纳米VCSEL器件及其制造使用纳米柱廊
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Application No.: US11084886Application Date: 2005-03-21
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Publication No.: US07400665B2Publication Date: 2008-07-15
- Inventor: Shih-Yuan Wang , M. Saif Islam , Raymond G. Beausoleil
- Applicant: Shih-Yuan Wang , M. Saif Islam , Raymond G. Beausoleil
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Developement Company, L.P.
- Current Assignee: Hewlett-Packard Developement Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01S5/183
- IPC: H01S5/183

Abstract:
A nano-colonnade VCSEL device and a method of fabrication utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a first layer to another horizontal surface of a second layer to connect the layers. The VCSEL device includes a first layer having the (111) horizontal surface; a second layer; and an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The VCSEL device further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, and distributed Bragg mirrors adjacent to opposite end of the nanowire column.
Public/Granted literature
- US20060098705A1 Nano-VCSEL device and fabrication thereof using nano-colonnades Public/Granted day:2006-05-11
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