发明授权
US07402497B2 Transistor device having an increased threshold stability without drive current degradation
有权
晶体管器件具有增加的阈值稳定性，而不会降低驱动电流
- 专利标题： Transistor device having an increased threshold stability without drive current degradation
- 专利标题（中）： 晶体管器件具有增加的阈值稳定性，而不会降低驱动电流
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申请号： US11551263申请日： 2006-10-20
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公开(公告)号： US07402497B2公开(公告)日： 2008-07-22
- 发明人: Andy Wei , Thorsten Kammler , Jan Hoentschel , Manfred Horstmann
- 申请人： Andy Wei , Thorsten Kammler , Jan Hoentschel , Manfred Horstmann
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102006009226 20060228
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
By removing a portion of a halo region or by avoiding the formation of the halo region within the extension region, which may be subsequently formed on the basis of a re-grown semiconductor material, the threshold roll off behavior may be significantly improved, wherein an enhanced current drive capability may simultaneously be achieved.
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