发明授权
- 专利标题: Method of forming through-silicon vias with stress buffer collars and resulting devices
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申请号: US11169595申请日: 2005-06-28
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公开(公告)号: US07402515B2公开(公告)日: 2008-07-22
- 发明人: Leonel R. Arana , Devendra Natekar , Michael Newman , Charan K. Gurumurthy
- 申请人: Leonel R. Arana , Devendra Natekar , Michael Newman , Charan K. Gurumurthy
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763 ; H01L21/44
摘要:
A method of forming a via having a stress buffer collar, wherein the stress buffer collar can absorb stress resulting from a mismatch in the coefficients of thermal expansion of the surrounding materials. Other embodiments are described and claimed.