发明授权
- 专利标题： Nitride semiconductor device
- 专利标题（中）： 氮化物半导体器件
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申请号： US11600123申请日： 2006-11-16
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公开(公告)号： US07402838B2公开(公告)日： 2008-07-22
- 发明人: Koji Tanizawa , Tomotsugu Mitani , Yoshinori Nakagawa , Hironori Takagi , Hiromitsu Marui , Yoshikatsu Fukuda , Takeshi Ikegami
- 申请人： Koji Tanizawa , Tomotsugu Mitani , Yoshinori Nakagawa , Hironori Takagi , Hiromitsu Marui , Yoshikatsu Fukuda , Takeshi Ikegami
- 申请人地址： JP Tokushima
- 专利权人： Nichia Corporation
- 当前专利权人： Nichia Corporation
- 当前专利权人地址： JP Tokushima
- 代理机构： Volentine & Whitt, PLLC
- 优先权： JPP10-060233 19980312; JPP10-161452 19980525; JPP10-284345 19981006; JPP10-326281 19981117; JPP10-348762 19981208; JPP10-368294 19981225; JPP11-023048 19990129; JPP11-023049 19990129
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In the nitride semiconductor device comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed therebetween, a multi-film layer with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.
公开/授权文献
- US20070063207A1 Nitride semiconductor device 公开/授权日：2007-03-22
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