发明授权
US07403553B2 Absorbing layers for reduced spontaneous emission effects in an integrated photodiode 有权
吸收层,用于降低集成光电二极管中的自发发射效应

Absorbing layers for reduced spontaneous emission effects in an integrated photodiode
摘要:
An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
信息查询
0/0