发明授权
- 专利标题: Low temperature formation of patterned epitaxial Si containing films
- 专利标题(中): 图案外延含Si薄膜的低温形成
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申请号: US11206059申请日: 2005-08-18
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公开(公告)号: US07405140B2公开(公告)日: 2008-07-29
- 发明人: Anthony Dip , Allen John Leith , Seungho Oh
- 申请人: Anthony Dip , Allen John Leith , Seungho Oh
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 主分类号: H01L21/36
- IPC分类号: H01L21/36 ; H01L21/20
摘要:
A method for selectively forming an epitaxial Si containing film on a semiconductor structure at low temperature. The method includes providing the structure in a process chamber, the structure containing a Si substrate having an epitaxial Si surface area and a patterned film area thereon. A Si film is non-selectively deposited onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film. The non-epitaxial Si film is selectively dry etched away to form a patterned epitaxial Si film. The Si film may be a SiGe film.