发明授权
- 专利标题： Stressed field effect transistors on hybrid orientation substrate
- 专利标题（中）： 混合取向衬底上强调场效应晶体管
-
申请号： US11029797申请日： 2005-01-05
-
公开(公告)号： US07405436B2公开(公告)日： 2008-07-29
- 发明人: Dureseti Chidambarrao , Judson R. Holt , Meikei Ieong , Oiging C. Ouyang , Siddhartha Panda
- 申请人： Dureseti Chidambarrao , Judson R. Holt , Meikei Ieong , Oiging C. Ouyang , Siddhartha Panda
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Ido Tuchman, Esq.
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L21/8238
摘要：
A semiconductor structure having improved carrier mobility is provided. The semiconductor structures includes a hybrid oriented semiconductor substrate having at least two planar surfaces of different crystallographic orientation, and at least one CMOS device located on each of the planar surfaces of different crystallographic orientation, wherein each CMOS device has a stressed channel. The present invention also provides methods of fabricating the same. In general terms, the inventive method includes providing a hybrid oriented substrate having at least two planar surfaces of different crystallographic orientation, and forming at least one CMOS device on each of the planar surfaces of different crystallographic orientation, wherein each CMOS device has a stressed channel.
公开/授权文献
信息查询
IPC分类:
