发明授权
- 专利标题: Plasma processing method and apparatus
- 专利标题(中): 等离子体处理方法和装置
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申请号: US10983670申请日: 2004-11-09
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公开(公告)号: US07406925B2公开(公告)日: 2008-08-05
- 发明人: Tomohiro Okumura , Yukihiro Maegawa , Izuru Matsuda , Takayuki Kai , Mitsuo Saitoh
- 申请人: Tomohiro Okumura , Yukihiro Maegawa , Izuru Matsuda , Takayuki Kai , Mitsuo Saitoh
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Wenderoth, Lind & Ponack, L.L.P.
- 优先权: JP2000-303334 20001003; JP2001-105442 20010404; JP2001-231433 20010731
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; C23C16/00
摘要:
A plasma processing apparatus including a vacuum chamber, a gas supply unit for supplying gas into the vacuum chamber, an exhausting unit for exhausting the interior of the vacuum chamber, a pressure-regulating valve for controlling the interior of the vacuum chamber to a specified pressure, a substrate electrode for placing thereon a substrate within the vacuum chamber, an antenna provided opposite to the substrate electrode, and a high-frequency power supply capable of supplying to the antenna a high-frequency power having a frequency of 50 MHz to 3 GHz. The plasma processing apparatus also has a dielectric plate sandwiched between the antenna and an inner surface of the vacuum chamber, an antenna cover for covering side surfaces of the antenna and the dielectric plate and a substrate-facing surface of the antenna, a slit cover for covering an exposed surface of the substrate-facing inner surface of the vacuum chamber and fixing the antenna cover to a wall surface of the vacuum chamber. Also, a heat-conducting sheet is provided between the antenna and the antenna cover.
公开/授权文献
- US20050082005A1 Plasma processing method and apparatus 公开/授权日:2005-04-21
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