Invention Grant
US07408154B2 Scanning electron microscope, method for measuring a dimension of a pattern using the same, and apparatus for correcting difference between scanning electron microscopes
有权
扫描电子显微镜,用于测量使用其的图案的尺寸的方法,以及用于校正扫描电子显微镜之间的差异的装置
- Patent Title: Scanning electron microscope, method for measuring a dimension of a pattern using the same, and apparatus for correcting difference between scanning electron microscopes
- Patent Title (中): 扫描电子显微镜,用于测量使用其的图案的尺寸的方法,以及用于校正扫描电子显微镜之间的差异的装置
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Application No.: US11260187Application Date: 2005-10-28
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Publication No.: US07408154B2Publication Date: 2008-08-05
- Inventor: Mayuka Oosaki , Chie Shishido , Hiroki Kawada , Tatsuya Maeda
- Applicant: Mayuka Oosaki , Chie Shishido , Hiroki Kawada , Tatsuya Maeda
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2004-314999 20041029
- Main IPC: G01N23/00
- IPC: G01N23/00 ; G21K7/00

Abstract:
As measurement accuracy required for the scanning electron microscope (SEM) for measuring a pattern width becomes stringent, a technique of reducing the difference in a measured dimension between the SEM's is desired. However, the conventional technique of evaluating the difference in a measured dimension between the SEM's cannot separate the difference in a measured dimension between the SEM's themselves and a dimensional change resulting from deformation of the pattern itself. Moreover, the technique of reducing the difference in a measured dimension between the SEM's needs an operator for reducing the difference in a measured dimension between the SEM's for each measurement pattern shape. In this invention, a pattern at the same position is measured for a plurality of times with each SEM, and a different between extrapolated values of measured values obtained by the respective SEM's is calculated, whereby separation between the difference in a measured dimension between the SEM's and a dimensional change resulting from deformation of the pattern itself is made possible. Moreover, matching electron beam image profiles between the SEM's using an operator that simulates a difference in beam diameter between the SEM's makes it possible to reduce the difference in a measured dimension between the SEM's, not depending on a dimensional measurement pattern shape.
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