发明授权
US07408227B2 Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide
有权
用于集成电路和CMOS器件的装置和方法，包括在碳化硅上的外延生长的电介质
- 专利标题： Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide
- 专利标题（中）： 用于集成电路和CMOS器件的装置和方法，包括在碳化硅上的外延生长的电介质
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申请号： US11524107申请日： 2006-09-20
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公开(公告)号： US07408227B2公开(公告)日： 2008-08-05
- 发明人: Mohammad R. Mirabedini , Valeriy Sukharev
- 申请人： Mohammad R. Mirabedini , Valeriy Sukharev
- 申请人地址： US CA Milpitas
- 专利权人： LSI Corporation
- 当前专利权人： LSI Corporation
- 当前专利权人地址： US CA Milpitas
- 代理商 L. Jon Lindsay
- 主分类号： H01L31/0312
- IPC分类号： H01L31/0312
摘要：
An integrated circuit, or portion thereof, such as a CMOS device, includes an epitaxially grown dielectric on a silicon carbide base. The epitaxially grown dielectric forms a gate dielectric and the silicon carbide base serves as a channel region for the CMOS device. In various embodiments, the epitaxially grown dielectric may be a crystalline carbon or carbon-containing film.
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