发明授权
- 专利标题： Semiconductor device undergoing defect detection test
- 专利标题（中）： 半导体器件进行缺陷检测测试
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申请号： US11703672申请日： 2007-02-08
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公开(公告)号： US07408818B2公开(公告)日： 2008-08-05
- 发明人: Kenji Yoshinaga , Masashi Matsumura , Futoshi Igaue , Mihoko Akiyama , Fukashi Morishita
- 申请人： Kenji Yoshinaga , Masashi Matsumura , Futoshi Igaue , Mihoko Akiyama , Fukashi Morishita
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2006-032787 20060209
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A semiconductor device has a first operation mode and a second operation mode in which power supply with a higher voltage value than that in the first operation mode is provided. The semiconductor device includes a memory portion having memory cells for storing data and a power supply circuit portion supplying a first voltage and a second voltage to the memory portion. The memory portion writes or reads data to or from the memory cells based on the first voltage and the second voltage, and the power supply circuit portion provides a smaller voltage difference between the first voltage and the second voltage in the second operation mode as compared with the voltage difference in the first operation mode.
公开/授权文献
- US20070183214A1 Semiconductor device undergoing defect detection test 公开/授权日：2007-08-09
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