- 专利标题: Semiconductor memory device and manufacturing method thereof
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申请号: US11878296申请日: 2007-07-23
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公开(公告)号: US07410857B2公开(公告)日: 2008-08-12
- 发明人: Masahiko Higashi , Manabu Nakamura , Kentaro Sera , Hiroyuki Nansei , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
- 申请人: Masahiko Higashi , Manabu Nakamura , Kentaro Sera , Hiroyuki Nansei , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
- 申请人地址: US CA Sunnyvale
- 专利权人: Spansion LLC.
- 当前专利权人: Spansion LLC.
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Kratz, Quintos & Hanson, LLP.
- 优先权: JP2002-255528 20020830
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
After an ONO film in which a silicon nitride film (22) formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (21), (23), a bit line diffusion layer (17) is formed in a memory cell array region (11) by an ion implantation as a resist pattern (16) taken as a mask, then lattice defects are given to the silicon nitride film (22) by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.