Invention Grant
- Patent Title: Method of removing ion implanted photoresist
- Patent Title (中): 去除离子注入光刻胶的方法
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Application No.: US11646700Application Date: 2006-12-28
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Publication No.: US07410909B2Publication Date: 2008-08-12
- Inventor: Ji Hye Han , Ok Min Moon , Woo Jin Kim , Hyo Seob Yoon , Ji Yong Park , Kee Joon Oh
- Applicant: Ji Hye Han , Ok Min Moon , Woo Jin Kim , Hyo Seob Yoon , Ji Yong Park , Kee Joon Oh
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2006-0044745 20060518
- Main IPC: H01L21/461
- IPC: H01L21/461 ; H01L21/302
Abstract:
A method of removing an ion implanted photoresist comprises performing first cleaning a semiconductor substrate having the ion implanted photoresist using hot deionized water to which a megasonic process is applied, first rinsing the semiconductor substrate using cold deionized water, drying the semiconductor substrate, removing the ion implanted photoresist, and second cleaning the semiconductor wafer using an SPM solution.
Public/Granted literature
- US20070269990A1 Method of removing ion implanted photoresist Public/Granted day:2007-11-22
Information query
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