发明授权
- 专利标题: Focused ion beam apparatus and focused ion beam irradiation method
- 专利标题(中): 聚焦离子束装置和聚焦离子束照射法
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申请号: US11189901申请日: 2005-07-27
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公开(公告)号: US07411192B2公开(公告)日: 2008-08-12
- 发明人: Koichiro Takeuchi , Tohru Ishitani , Yoichi Ose
- 申请人: Koichiro Takeuchi , Tohru Ishitani , Yoichi Ose
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2004-222212 20040729
- 主分类号: H01J1/50
- IPC分类号: H01J1/50 ; H01J37/08 ; G21K7/00 ; G21K1/093
摘要:
A focused ion beam apparatus and a focused ion beam irradiation method are disclosed. Even in the case where a magnetic field exists on the optical axis of an ion beam and the particular magnetic field undergoes a change, the ion beam is focused without separating the isotopes on the sample at the same ion beam spot position as if the magnetic field is not existent. A canceling magnetic field is generated on the optical axis of the ion beam from a canceling magnetic field generator thereby to offset the deflection of the ion beam due to the external magnetic field.
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