发明授权
- 专利标题： Surface acoustic wave apparatus and manufacturing method therefor
- 专利标题（中）： 表面声波装置及其制造方法
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申请号： US11674928申请日： 2007-02-14
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公开(公告)号： US07411334B2公开(公告)日： 2008-08-12
- 发明人: Kenji Nishiyama , Takeshi Nakao , Michio Kadota
- 申请人： Kenji Nishiyama , Takeshi Nakao , Michio Kadota
- 申请人地址： JP Kyoto
- 专利权人： Murata Manufacturing Co., Ltd.
- 当前专利权人： Murata Manufacturing Co., Ltd.
- 当前专利权人地址： JP Kyoto
- 代理机构： Keating & Bennett, LLP
- 优先权： JP2002-215614 20020724; JP2003-041480 20030219
- 主分类号： H01L41/08
- IPC分类号： H01L41/08
摘要：
In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.
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