发明授权
- 专利标题: Solid-state imaging device and manufacturing method for the same
- 专利标题(中): 固态成像装置及其制造方法相同
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申请号: US11330396申请日: 2006-01-12
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公开(公告)号: US07416915B2公开(公告)日: 2008-08-26
- 发明人: Masahiro Kasano , Yuichi Inaba , Takumi Yamaguchi
- 申请人: Masahiro Kasano , Yuichi Inaba , Takumi Yamaguchi
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2005-009619 20050117
- 主分类号: H01L31/0216
- IPC分类号: H01L31/0216
摘要:
Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.
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