发明授权
- 专利标题: Semiconductor device, and method for manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US11526637申请日: 2006-09-26
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公开(公告)号: US07416967B2公开(公告)日: 2008-08-26
- 发明人: Yoshinori Tsuchiya , Masato Koyama , Masahiko Yoshiki
- 申请人: Yoshinori Tsuchiya , Masato Koyama , Masahiko Yoshiki
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JPP2006-063290 20060308
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205
摘要:
According to an aspect of the invention, a semiconductor device comprises: a N-channel MIS transistor comprising; a p-type semiconductor layer; a first gate insulation layer formed on the p-type semiconductor layer; a first gate electrode formed on the first gate insulation layer; and a first source-drain region formed in the p-type semiconductor layer where the first gate electrode is sandwiched along a direction of gate length. The first gate electrode comprises a crystal phase including a cubic crystal of NiSi2 which has a lattice constant of 5.39 angstroms to 5.40 angstroms.