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发明授权
US07416997B2 Method of fabricating semiconductor device including removing impurities from silicon nitride layer 失效
制造半导体器件的方法，包括从氮化硅层去除杂质

Method of fabricating semiconductor device including removing impurities from silicon nitride layer
摘要：
A method of fabricating a semiconductor device having a silicon nitride layer substantially free of impurities includes forming a silicon nitride layer on a semiconductor substrate and annealing the semiconductor substrate having the silicon nitride layer in an atmosphere of ammonia (NH3) gas to remove impurities from the silicon nitride layer. The silicon nitride layer may be formed using BTBAS as a silicon precursor.
摘要（中）：

一种制造具有基本上不含杂质的氮化硅层的半导体器件的方法包括在半导体衬底上形成氮化硅层，并在氨气氛中退火具有氮化硅层的半导体衬底（NH 3 >）气体以从氮化硅层去除杂质。 可以使用BTBAS作为硅前体形成氮化硅层。

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