发明授权
- 专利标题： Distributed high voltage JFET
- 专利标题（中）： 分布式高电压JFET
-
申请号： US10874479申请日： 2004-06-23
-
公开(公告)号： US07417270B2公开(公告)日： 2008-08-26
- 发明人: Philip L. Hower , David A. Walch , John Lin , Steven L. Merchant
- 申请人： Philip L. Hower , David A. Walch , John Lin , Steven L. Merchant
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Frederick J. Telecky, Jr.; Wade J. Brady, III
- 主分类号： H01L29/80
- IPC分类号： H01L29/80
摘要：
A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.
公开/授权文献
- US20050285157A1 Distributed high voltage JFET 公开/授权日：2005-12-29
信息查询
IPC分类:
