发明授权
- 专利标题: Method for producing single electron semiconductor element
- 专利标题(中): 单电子半导体元件的制造方法
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申请号: US11878691申请日: 2007-07-26
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公开(公告)号: US07419849B2公开(公告)日: 2008-09-02
- 发明人: Shinya Kumagai , Shigeo Yoshii , Nozomu Matsukawa , Ichiro Yamashita
- 申请人: Shinya Kumagai , Shigeo Yoshii , Nozomu Matsukawa , Ichiro Yamashita
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2006-028438 20060206
- 主分类号: H01L51/40
- IPC分类号: H01L51/40
摘要:
The present invention provides a method for production of a single electron semiconductor element (SET) in which a quantum dot is selectively arranged in a nano gap between fine electrodes, whereby the product yield is significantly improved, leading to excellent practical applicability. The method for production of SET of the present invention is characterized in that a solution containing ferritin including a metal or semiconductor particle therein, and a nonionic surfactant is dropped on a substrate having a source electrode and a drain electrode formed by laminating a titanium film and a film of a metal other than titanium, whereby the ferritin is selectively arranged in a nano gap between the source electrode/drain electrode.