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公开(公告)号：US20080108227A1
公开(公告)日：2008-05-08
申请号：US11878691
申请日：2007-07-26
IPC分类号： H01L21/28
CPC分类号： H01L29/7613 , B82Y10/00 , H01L29/66439 , H01L49/006 , Y10S438/962 , Y10S977/773
摘要： The present invention provides a method for production of a single electron semiconductor element (SET) in which a quantum dot is selectively arranged in a nano gap between fine electrodes, whereby the product yield is significantly improved, leading to excellent practical applicability. The method for production of SET of the present invention is characterized in that a solution containing ferritin including a metal or semiconductor particle therein, and a nonionic surfactant is dropped on a substrate having a source electrode and a drain electrode formed by laminating a titanium film and a film of a metal other than titanium, whereby the ferritin is selectively arranged in a nano gap between the source electrode/drain electrode. In the method for production of SET of the present invention, the metal or semiconductor particle can be fixed as a quantum dot at a suitable position in the nano gap between the source electrode/drain electrode following decomposition of ferritin, and in addition, formation of unnecessary quantum dot can be suppressed.
摘要翻译： 本发明提供一种单电子半导体元件（SET）的制造方法，其中量子点选择性地排列在细电极之间的纳米间隙中，从而显着提高了产品产率，从而实现了优异的实用性。 本发明的SET的制造方法的特征在于，将含有金属或半导体粒子的铁蛋白和非离子表面活性剂的溶液滴落在具有源极电极和漏电极的基板上，所述源极和漏极通过层叠钛膜和 除钛以外的金属的膜，由此铁素体选择性地排列在源电极/漏电极之间的纳米间隙中。 在本发明的SET的制造方法中，金属或半导体粒子可以在铁蛋白分解后的源电极/漏电极之间的纳米间隙的适当位置作为量子点固定，另外，形成 可以抑制不必要的量子点。
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公开(公告)号：US07419849B2
公开(公告)日：2008-09-02
申请号：US11878691
申请日：2007-07-26
IPC分类号： H01L51/40
CPC分类号： H01L29/7613 , B82Y10/00 , H01L29/66439 , H01L49/006 , Y10S438/962 , Y10S977/773
摘要： The present invention provides a method for production of a single electron semiconductor element (SET) in which a quantum dot is selectively arranged in a nano gap between fine electrodes, whereby the product yield is significantly improved, leading to excellent practical applicability. The method for production of SET of the present invention is characterized in that a solution containing ferritin including a metal or semiconductor particle therein, and a nonionic surfactant is dropped on a substrate having a source electrode and a drain electrode formed by laminating a titanium film and a film of a metal other than titanium, whereby the ferritin is selectively arranged in a nano gap between the source electrode/drain electrode.
摘要翻译： 本发明提供一种单电子半导体元件（SET）的制造方法，其中量子点选择性地排列在细电极之间的纳米间隙中，从而显着提高了产品产率，从而实现了优异的实用性。 本发明的SET的制造方法的特征在于，将含有金属或半导体粒子的铁蛋白和非离子表面活性剂的溶液滴落在具有源极电极和漏电极的基板上，所述源极和漏极通过层叠钛膜和 除钛以外的金属的膜，由此铁素体选择性地排列在源电极/漏电极之间的纳米间隙中。
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3.发明申请公开(公告)号：US20060070494A1
公开(公告)日：2006-04-06
申请号：US11284910
申请日：2005-11-23
IPC分类号： B22F9/20
CPC分类号： B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42332
摘要： An object of the present invention is to provide a method of forming fine particles on a substrate in which reoxidization of reduced fine particles is suppressed. Reduced fine particles (FeO fine particles) are formed by embedding metal oxide fine particles (Fe2O3 fine particles) fixed on a p type silicon semiconductor substrate into a silicon oxidized film, and carrying out a heat treatment in a reducing gas atmosphere. Presence of the silicon oxidized film enables suppression of reoxidization of the reduced fine particles (FeO fine particles) due to exposure to the ambient air.
摘要翻译： 本发明的目的是提供一种在抑制还原的微粒的再氧化的基板上形成微粒的方法。 通过将固定在p型硅半导体衬底上的金属氧化物微粒（Fe 2 O 3 O 3微粒）嵌入到硅氧化膜中而形成还原的微粒（FeO微粒） ，并在还原气体气氛中进行热处理。 硅氧化膜的存在能够抑制由于暴露于环境空气而导致的还原的微粒（FeO微粒）的再氧化。
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4.发明授权公开(公告)号：US07419529B2
公开(公告)日：2008-09-02
申请号：US11284910
申请日：2005-11-23
IPC分类号： B22F9/20
CPC分类号： B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42332
摘要： An object of the present invention is to provide a method of forming fine particles on a substrate in which reoxidization of reduced fine particles is suppressed. Reduced fine particles (FeO fine particles) are formed by embedding metal oxide fine particles (Fe2O3 fine particles) fixed on a p type silicon semiconductor substrate into a silicon oxidized film, and carrying out a heat treatment in a reducing gas atmosphere. Presence of the silicon oxidized film enables suppression of reoxidization of the reduced fine particles (FeO fine particles) due to exposure to the ambient air.
摘要翻译： 本发明的目的是提供一种在抑制还原的微粒的再氧化的基板上形成微粒的方法。 通过将固定在p型硅半导体衬底上的金属氧化物微粒（Fe 2 O 3 O 3微粒）嵌入到硅氧化膜中而形成还原的微粒（FeO微粒） ，并在还原气体气氛中进行热处理。 硅氧化膜的存在能够抑制由于暴露于环境空气而导致的还原的微粒（FeO微粒）的再氧化。
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公开(公告)号：US20120058490A1
公开(公告)日：2012-03-08
申请号：US13296879
申请日：2011-11-15
申请人： Kazuaki NISHIO , Nozomu Matsukawa , Shigeo Yoshii
发明人： Kazuaki NISHIO , Nozomu Matsukawa , Shigeo Yoshii
IPC分类号： G01N27/00
CPC分类号： G01N33/54306 , C12Q1/26
摘要： Provided is a method for detecting an antigen without use of a labeled-antibody. A support having an antibody and a multi-copper oxidase CueO immobilized thereon is brought into contact with a first buffer solution containing the antigen, a current is measured by a potentiostat method using the support and a second buffer solution, and when the measured current is greater than or equal to 1.5×(blank value), it is determined that the antigen exists. The second buffer solution contains a substrate of the CueO and has an ionic strength falling within a range of not less than 0.3 mM and not more than 1.0 mM.
摘要翻译： 提供了不使用标记抗体来检测抗原的方法。 使具有固定在其上的抗体和多铜氧化酶CueO的载体与含有抗原的第一缓冲溶液接触，通过使用载体和第二缓冲溶液的恒电位法测量电流，并且当测量的电流为 大于或等于1.5×（空白值），则确定存在抗原。 第二缓冲溶液含有CueO的底物，离子强度在0.3mM以上1.0mM以下的范围内。
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公开(公告)号：US20120309033A1
公开(公告)日：2012-12-06
申请号：US13536202
申请日：2012-06-28
申请人： Kazuaki Nishio , Nozomu Matsukawa , Shigeo Yoshii
发明人： Kazuaki Nishio , Nozomu Matsukawa , Shigeo Yoshii
IPC分类号： G01N21/78
CPC分类号： G01N33/542 , C12Q1/26 , G01N33/54373 , G01N2333/90287
摘要： The present invention relates to a method for detecting an antigen with use of an antibody and an enzyme. Specifically, the present invention provides a method for detecting an antigen without use of a labeled-antibody. the method comprises immersing particles in a first buffer solution which is predicted to contain the antigen; wherein an antibody and a multi-copper oxidase CueO are immobilized on each surface of the particles, and the antibody reacts specifically with the antigen. The method further comprises the following steps recovering the obtained particles; mixing the particles recovered, an oxidation-reduction indicator (reductant), and a second buffer solution so as to prepare a reaction solution; measuring an activity degree of the multi-copper oxidase CueO contained in the reaction solution; determining that the first buffer solution contains the antigen based on the above activity degree.
摘要翻译： 本发明涉及使用抗体和酶检测抗原的方法。 具体而言，本发明提供了不使用标记抗体来检测抗原的方法。 该方法包括将颗粒浸入预测含有抗原的第一缓冲溶液中; 其中抗体和多铜氧化酶CueO固定在颗粒的每个表面上，并且抗体与抗原特异性反应。 该方法还包括以下步骤：回收所获得的颗粒; 混合回收的颗粒，氧化还原指示剂（还原剂）和第二缓冲溶液以制备反应溶液; 测定反应溶液中所含的多铜氧化酶CueO的活度; 基于上述活性度确定第一缓冲溶液含有抗原。
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公开(公告)号：US08309345B2
公开(公告)日：2012-11-13
申请号：US13296879
申请日：2011-11-15
申请人： Kazuaki Nishio , Nozomu Matsukawa , Shigeo Yoshii
发明人： Kazuaki Nishio , Nozomu Matsukawa , Shigeo Yoshii
CPC分类号： G01N33/54306 , C12Q1/26
摘要： Provided is a method for detecting an antigen without use of a labeled-antibody. A support having an antibody and a multi-copper oxidase CueO immobilized thereon is brought into contact with a first buffer solution containing the antigen, a current is measured by a potentiostat method using the support and a second buffer solution, and when the measured current is greater than or equal to 1.5×(blank value), it is determined that the antigen exists. The second buffer solution contains a substrate of the CueO and has an ionic strength falling within a range of not less than 0.3 mM and not more than 1.0 mM.
摘要翻译： 提供了不使用标记抗体来检测抗原的方法。 使具有固定在其上的抗体和多铜氧化酶CueO的载体与含有抗原的第一缓冲溶液接触，通过使用载体和第二缓冲溶液的恒电位法测量电流，并且当测量的电流为 大于或等于1.5×（空白值），则确定存在抗原。 第二缓冲溶液含有CueO的底物，离子强度在0.3mM以上1.0mM以下的范围内。
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公开(公告)号：US08470549B2
公开(公告)日：2013-06-25
申请号：US13536202
申请日：2012-06-28
申请人： Kazuaki Nishio , Nozomu Matsukawa , Shigeo Yoshii
发明人： Kazuaki Nishio , Nozomu Matsukawa , Shigeo Yoshii
CPC分类号： G01N33/542 , C12Q1/26 , G01N33/54373 , G01N2333/90287
摘要： The present invention relates to a method for detecting an antigen with use of an antibody and an enzyme. Specifically, the present invention provides a method for detecting an antigen without use of a labeled-antibody. the method comprises immersing particles in a first buffer solution which is predicted to contain the antigen; wherein an antibody and a multi-copper oxidase CueO are immobilized on each surface of the particles, and the antibody reacts specifically with the antigen. The method further comprises the following steps recovering the obtained particles; mixing the particles recovered, an oxidation-reduction indicator (reductant), and a second buffer solution so as to prepare a reaction solution; measuring an activity degree of the multi-copper oxidase CueO contained in the reaction solution; determining that the first buffer solution contains the antigen based on the above activity degree.
摘要翻译： 本发明涉及使用抗体和酶检测抗原的方法。 具体而言，本发明提供了不使用标记抗体来检测抗原的方法。 该方法包括将颗粒浸入预测含有抗原的第一缓冲溶液中; 其中抗体和多铜氧化酶CueO固定在颗粒的每个表面上，并且抗体与抗原特异性反应。 该方法还包括以下步骤：回收所获得的颗粒; 混合回收的颗粒，氧化还原指示剂（还原剂）和第二缓冲溶液以制备反应溶液; 测定反应溶液中所含的多铜氧化酶CueO的活度; 基于上述活性度确定第一缓冲溶液含有抗原。
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公开(公告)号：US07825070B2
公开(公告)日：2010-11-02
申请号：US12270336
申请日：2008-11-13
申请人： Takuro Matsui , Nozomu Matsukawa , Kazuaki Nishio
发明人： Takuro Matsui , Nozomu Matsukawa , Kazuaki Nishio
摘要： A novel method for two-dimensionally arraying ferritin on a substrate is provided which obviates the need for a metal ion that permits linking between adjacent two ferritin particles. In a method of two-dimensionally arraying ferritin on a substrate, the surface of the substrate is hydrophilic, and the method includes the steps of: developing a solution containing a solvent and the ferritin on the substrate; and removing the solvent from the solution developed on the substrate, while the ferritin has an amino acid sequence set out in SEQ ID NO: 1 modified at its N-terminus.
摘要翻译： 提供了一种用于在基底上二维排列铁蛋白的新方法，其消除了允许在相邻的两个铁蛋白颗粒之间连接的金属离子的需要。 在基板上二维排列铁蛋白的方法中，基板的表面是亲水性的，该方法包括以下步骤：在基板上显影含有溶剂和铁蛋白的溶液; 并从底物上显影的溶液中除去溶剂，而铁蛋白具有在其N末端修饰的SEQ ID NO：1所示的氨基酸序列。
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10.发明授权Magnetoresistive element and method for producing the same, as well as magnetic head, magnetic memory and magnetic recording device using the same 失效磁阻元件及其制造方法以及使用该磁阻元件的磁头，磁存储器和磁记录装置公开(公告)号：US06943041B2
公开(公告)日：2005-09-13
申请号：US10719412
申请日：2003-11-21
IPC分类号： G01R33/09 , G11B5/39 , G11C11/16 , H01F10/32 , H01F41/30 , H01L27/22 , H01L43/08 , H01L43/12 , H01L21/00
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01F41/302 , H01L43/08 , H01L43/12
摘要： The present invention provides a method for producing a magnetoresistive element including a tunnel insulating layer, and a first magnetic layer and a second magnetic layer that are laminated so as to sandwich the tunnel insulating layer, wherein a resistance value varies depending on a relative angle between magnetization directions of the first magnetic layer and the second magnetic layer. The method includes the steps of: (i) laminating a first magnetic layer, a third magnetic layer and an Al layer successively on a substrate; (ii) forming a tunnel insulating layer containing at least one compound selected from the group consisting of an oxide, nitride and oxynitride of Al by performing at least one reaction selected from the group consisting of oxidation, nitriding and oxynitriding of the Al layer; and (iii) forming a laminate including the first magnetic layer, the tunnel insulating layer and a second magnetic layer by laminating the second magnetic layer in such a manner that the tunnel insulating layer is sandwiched by the first magnetic layer and the second magnetic layer. The third magnetic layer has at least one crystal structure selected from the group consisting of a face-centered cubic crystal structure and a face-centered tetragonal crystal structure and is (111) oriented parallel to a film plane of the third magnetic layer. According to this production method, it is possible to produce a magnetoresistive element with excellent properties and thermal stability.
摘要翻译： 本发明提供了一种制造磁阻元件的方法，该磁阻元件包括隧道绝缘层，以及第一磁性层和第二磁性层，其被层压以夹住隧道绝缘层，其中电阻值根据相对角度而变化 第一磁性层和第二磁性层的磁化方向。 该方法包括以下步骤：（i）在衬底上依次层叠第一磁性层，第三磁性层和Al层; （ii）通过进行选自Al层的氧化，氮化和氮氧化的至少一种反应，形成包含至少一种选自Al的氧化物，氮化物和氮氧化物的化合物的隧道绝缘层; 以及（iii）通过层叠所述第二磁性层来形成包括所述第一磁性层，所述隧道绝缘层和第二磁性层的层压体，使得所述隧道绝缘层被所述第一磁性层和所述第二磁性层夹在中间。 第三磁性层具有至少一种选自面心立方晶体结构和面心四边形晶体结构的晶体结构，并且（111）取向为平行于第三磁性层的膜平面。 根据该制造方法，可以制造出具有优异性能和热稳定性的磁阻元件。
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