发明授权
US07420243B2 Non-volatile memory device with buried control gate and method of fabricating the same
失效
具有埋地控制栅极的非易失性存储器件及其制造方法
- 专利标题: Non-volatile memory device with buried control gate and method of fabricating the same
- 专利标题(中): 具有埋地控制栅极的非易失性存储器件及其制造方法
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申请号: US11248691申请日: 2005-10-12
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公开(公告)号: US07420243B2公开(公告)日: 2008-09-02
- 发明人: Ki-chul Kim , Geum-jong Bae , In-wook Cho , Byoung-jin Lee , Jin-hee Kim
- 申请人: Ki-chul Kim , Geum-jong Bae , In-wook Cho , Byoung-jin Lee , Jin-hee Kim
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Mills & Onello LLP
- 优先权: KR10-2004-0112200 20041224
- 主分类号: H01L29/788
- IPC分类号: H01L29/788
摘要:
In a non-volatile memory device with a buried control gate, the effective channel length of the control gate is increased to restrain punchthrough, and a region for storing charge is increased for attaining favorably large capacity. A method of fabricating the memory device includes forming the control gate within a trench formed in a semiconductor substrate, and forming charge storing regions in the semiconductor substrate on both sides of the control gate in a self-aligning manner, thereby allowing for multi-level cell operation.