Invention Grant
- Patent Title: Aluminum incorporation in porous dielectric for improved mechanical properties of patterned dielectric
- Patent Title (中): 铝结合在多孔电介质中以改善图案化电介质的机械性能
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Application No.: US11479519Application Date: 2006-06-30
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Publication No.: US07422020B2Publication Date: 2008-09-09
- Inventor: Vijayakumar Ramachandrarao , Grant Kloster
- Applicant: Vijayakumar Ramachandrarao , Grant Kloster
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: B08B6/00
- IPC: B08B6/00 ; H01L21/302
Abstract:
A porous dielectric layer is formed on a substrate. Aluminum is incorporated in the porous dielectric layer with a pattern process using an Aluminum gas precursor. The incorporated Aluminum improves the mechanical properties of the porous dielectric layer.
Public/Granted literature
- US20080000875A1 Aluminum incorporation in porous dielectric for improved mechanical properties of patterned dielectric Public/Granted day:2008-01-03
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