发明授权
US07422366B1 Current mirror methodology quantifying time dependent thermal instability accurately in SOI BJT circuitry
有权
电流镜法在SOI BJT电路中精确地量化时间依赖性热不稳定性
- 专利标题： Current mirror methodology quantifying time dependent thermal instability accurately in SOI BJT circuitry
- 专利标题（中）： 电流镜法在SOI BJT电路中精确地量化时间依赖性热不稳定性
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申请号： US10939006申请日： 2004-09-10
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公开(公告)号： US07422366B1公开(公告)日： 2008-09-09
- 发明人: Jonggook Kim , Yun Liu , Joseph A De Santis
- 申请人： Jonggook Kim , Yun Liu , Joseph A De Santis
- 申请人地址： US CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Stallman & Pollock LLP
- 主分类号： G01K7/01
- IPC分类号： G01K7/01
摘要：
A current mirror method is provided that can be utilized to evaluate thermal issues is silicon-on-insulator (SOI) bipolar junction transistors (BJTs). The method significantly improves safe operating area (SOA) measurement sensitivity. Unlike conventional methods, the current mirror method can provide quantitative analysis of the BJTs thermal instability over a wide power range, even in the apparent SOA of the device. This method can also predict and evaluate SOA with respect to emitter ballast resistance and current crowding.
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