发明授权
- 专利标题： Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
- 专利标题（中）： 发光半导体器件，发光系统和制造发光半导体器件的方法
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申请号： US11143660申请日： 2005-06-03
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公开(公告)号： US07422504B2公开(公告)日： 2008-09-09
- 发明人: Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
- 申请人： Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2001-265540 20010903; JP2001-381368 20011214; JP2001-381369 20011214; JP2001-381370 20011214
- 主分类号： H01J1/62
- IPC分类号： H01J1/62 ; H01J63/04
摘要：
A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0
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