发明授权
- 专利标题： Fabrication method of semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US11446135申请日： 2006-06-05
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公开(公告)号： US07422630B2公开(公告)日： 2008-09-09
- 发明人: Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame
- 申请人： Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP8-32875 19960126
- 主分类号： C30B25/02
- IPC分类号： C30B25/02
摘要：
Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film 103. Then, laser light is irradiated to diffuse the nickel element concentrated locally. After that, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. A thermal oxide film 106 is formed in this step. At this time, the nickel element is gettered to the thermal oxide film 106. Then, the thermal oxide film 106 is removed. Thereby, a crystal silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.
公开/授权文献
- US20060236920A1 Fabrication method of semiconductor device 公开/授权日：2006-10-26
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