发明授权
- 专利标题： Semiconductor device with dummy electrode
- 专利标题（中）： 具有虚拟电极的半导体器件
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申请号： US11602293申请日： 2006-11-21
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公开(公告)号： US07425498B2公开(公告)日： 2008-09-16
- 发明人: Satoshi Shimizu
- 申请人： Satoshi Shimizu
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2003-143761 20030521
- 主分类号： H01L21/3213
- IPC分类号： H01L21/3213 ; H01L21/4763
摘要：
A semiconductor device includes a gate electrode having a straight portion, a dummy electrode located at a point on the extension of the straight portion, a stopper insulating film, a sidewall insulating film, an interlayer insulating film, and a linear contact portion extending, when viewed from above, parallel to the straight portion. The longer side of the rectangle defined by the linear contact portion is, when viewed from above, located beyond the sidewall insulating film and within the top region of the gate electrode and the dummy electrode. A gap G between the gate electrode and the dummy electrode appearing, when viewed from above, in the linear contact portion is filled with the sidewall insulating film such that the semiconductor substrate is not exposed.
公开/授权文献
- US20070063291A1 Semiconductor device with dummy electrode 公开/授权日：2007-03-22
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