Invention Grant
- Patent Title: Method and apparatus for inspecting target defects on a wafer
- Patent Title (中): 用于检查晶片上的目标缺陷的方法和装置
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Application No.: US11461726Application Date: 2006-08-01
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Publication No.: US07426031B2Publication Date: 2008-09-16
- Inventor: Moon-Kyung Kim , Chung-Sam Jun , Yu-Sin Yang
- Applicant: Moon-Kyung Kim , Chung-Sam Jun , Yu-Sin Yang
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Marger Johnson & McCollom, P.C.
- Priority: KR10-2005-0070631 20050802
- Main IPC: G01B9/08
- IPC: G01B9/08 ; G01N21/00

Abstract:
A defect inspecting apparatus includes a first support unit supporting a standard sample having standard defects, a second support unit supporting a wafer having target defects, a light source irradiating an incident light to the standard sample or the wafer, a light receiving part collecting reflection light reflected from the standard sample and the wafer, a detection part detecting the standard defects and the target defects by using the reflection light, a comparing part comparing information obtained using the reflection light reflected from the standard sample with a predetermined standard information of the standard defects to confirm a reliability of a step for detecting the target defects and a determination portion determining whether the step is allowed to be performed or not.
Public/Granted literature
- US20070030478A1 METHOD AND APPARATUS FOR INSPECTING TARGET DEFECTS ON A WAFER Public/Granted day:2007-02-08
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