发明授权
- 专利标题: Sense circuit for resistive memory
- 专利标题(中): 电阻式存储器感应电路
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申请号: US11361811申请日: 2006-02-24
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公开(公告)号: US07426134B2公开(公告)日: 2008-09-16
- 发明人: Thomas Happ , Matthew J. Breitwisch , Hsiang-Lang Lung
- 申请人: Thomas Happ , Matthew J. Breitwisch , Hsiang-Lang Lung
- 申请人地址: US CA San Jose
- 专利权人: Infineon Technologies North America
- 当前专利权人: Infineon Technologies North America
- 当前专利权人地址: US CA San Jose
- 代理机构: Dicke, Billig & Czaja, PLLC
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A memory includes a phase-change memory cell and a circuit. The phase-change memory cell can be set to at least three different states including a substantially crystalline state, a substantially amorphous state, and at least one partially crystalline and partially amorphous state. The circuit applies a first voltage across the memory cell to determine whether the memory cell is set at the substantially crystalline state and applies a second voltage across the memory cell to determine whether the memory cell is set at a partially crystalline and partially amorphous state.
公开/授权文献
- US20070201267A1 Sense circuit for resistive memory 公开/授权日:2007-08-30