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公开(公告)号：US07426134B2
公开(公告)日：2008-09-16
申请号：US11361811
申请日：2006-02-24
IPC分类号： G11C11/00
CPC分类号： G11C7/062 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C2013/0054 , G11C2211/5634
摘要： A memory includes a phase-change memory cell and a circuit. The phase-change memory cell can be set to at least three different states including a substantially crystalline state, a substantially amorphous state, and at least one partially crystalline and partially amorphous state. The circuit applies a first voltage across the memory cell to determine whether the memory cell is set at the substantially crystalline state and applies a second voltage across the memory cell to determine whether the memory cell is set at a partially crystalline and partially amorphous state.
摘要翻译： 存储器包括相变存储器单元和电路。 相变存储单元可以被设置为至少三种不同的状态，包括基本上为结晶状态，基本为非晶状态，以及至少一种部分结晶和部分非晶状态。 电路在存储器单元两端施加第一电压以确定存储器单元是否被设置在基本上为结晶状态，并且在该存储单元上施加第二电压以确定存储器单元是否被设置为部分结晶和部分非晶态。
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公开(公告)号：US20070201267A1
公开(公告)日：2007-08-30
申请号：US11361811
申请日：2006-02-24
IPC分类号： G11C11/00
CPC分类号： G11C7/062 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C2013/0054 , G11C2211/5634
摘要： A memory includes a phase-change memory cell and a circuit. The phase-change memory cell can be set to at least three different states including a substantially crystalline state, a substantially amorphous state, and at least one partially crystalline and partially amorphous state. The circuit applies a first voltage across the memory cell to determine whether the memory cell is set at the substantially crystalline state and applies a second voltage across the memory cell to determine whether the memory cell is set at a partially crystalline and partially amorphous state.
摘要翻译： 存储器包括相变存储器单元和电路。 相变存储单元可以被设置为至少三种不同的状态，包括基本上为结晶状态，基本为非晶状态，以及至少一种部分结晶和部分非晶状态。 电路在存储器单元两端施加第一电压以确定存储器单元是否被设置在基本上为结晶状态，并且在该存储单元上施加第二电压以确定存储器单元是否被设置为部分结晶和部分非晶态。
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