Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US11252584Application Date: 2005-10-19
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Publication No.: US07427031B2Publication Date: 2008-09-23
- Inventor: Norihiko Hakushi , Atsushi Ohba , Yoshimasa Yoshimura , Takeshi Nakayama
- Applicant: Norihiko Hakushi , Atsushi Ohba , Yoshimasa Yoshimura , Takeshi Nakayama
- Applicant Address: JP Tokyo JP Hyogo
- Assignee: Renesas Technology Corp.,Renesas Device Design Corp.
- Current Assignee: Renesas Technology Corp.,Renesas Device Design Corp.
- Current Assignee Address: JP Tokyo JP Hyogo
- Agency: McDermott Will & Emery LLP
- Priority: JP2002-261460 20020906
- Main IPC: G06K19/06
- IPC: G06K19/06

Abstract:
A semiconductor memory device including a flash memory and a RAM incorporating a pseudo-SRAM contained in an MCP, has an internal transfer control signal for controlling internal data transfer between the flash memory and pseudo-SRAM, and an external transfer control signal for controlling data transfer between an external CPU and pseudo-SRAM, as control signals for the pseudo-SRAM. A flash controller in the RAM controls the internal transfer control signal so as to suspend the internal data transfer between the flash memory and pseudo-SRAM when the external CPU requests access to the pseudo-SRAM during the internal data transfer.
Public/Granted literature
- US20060065746A1 Semiconductor memory device Public/Granted day:2006-03-30
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