发明授权
- 专利标题: Method to planarize and reduce defect density of silicon germanium
- 专利标题(中): 平面化和降低硅锗缺陷密度的方法
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申请号: US10799335申请日: 2004-03-12
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公开(公告)号: US07427556B2公开(公告)日: 2008-09-23
- 发明人: Pierre Tomasini , Nyles Cody , Chantal Arena
- 申请人: Pierre Tomasini , Nyles Cody , Chantal Arena
- 申请人地址: US AZ Phoenix
- 专利权人: ASM America, Inc.
- 当前专利权人: ASM America, Inc.
- 当前专利权人地址: US AZ Phoenix
- 代理机构: Knobbe, Martens, Olson & Bear LLP
- 主分类号: H01L21/20
- IPC分类号: H01L21/20 ; C30B23/00
摘要:
A method for blanket depositing a SiGe film comprises intermixing a silicon source, a germanium source and an etchant to form a gaseous precursor mixture. The method further comprises flowing the gaseous precursor mixture over a substrate under chemical vapor deposition conditions to deposit a blanket layer of epitaxial SiGe onto the substrate, whether patterned or un-patterned.