Invention Grant
US07427573B2 Forming composite metal oxide layer with hafnium oxide and titanium oxide
有权
用氧化铪和氧化钛形成复合金属氧化物层
- Patent Title: Forming composite metal oxide layer with hafnium oxide and titanium oxide
- Patent Title (中): 用氧化铪和氧化钛形成复合金属氧化物层
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Application No.: US11328014Application Date: 2006-01-09
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Publication No.: US07427573B2Publication Date: 2008-09-23
- Inventor: Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Tae-Min Eom , Ji-Hyun Lee
- Applicant: Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Tae-Min Eom , Ji-Hyun Lee
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2005-0002168 20050110
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/31
Abstract:
A metal oxide alloy layer comprises a first layer including a first metal oxide and having a first thickness, and a second layer formed on the first layer, the second layer including a second metal oxide and having a second thickness, wherein a value of the first thickness is such that the first metal oxide is allowed to move into the second layer and a value of the second thickness is such that the second metal oxide is allowed to move into the first layer to form a single-layered structure in which the first and second metal oxides are mixed.
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