发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11503941申请日: 2006-08-15
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公开(公告)号: US07430149B2公开(公告)日: 2008-09-30
- 发明人: Kenji Yoshinaga , Fukashi Morishita
- 申请人: Kenji Yoshinaga , Fukashi Morishita
- 申请人地址: JP Chiyoda-Ku, Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Chiyoda-Ku, Tokyo
- 代理机构: Buchanan Ingersoll & Rooney PC
- 优先权: JP2005-253508 20050901
- 主分类号: G11C5/01
- IPC分类号: G11C5/01
摘要:
There is provided a semiconductor device supplied with internal power generated by an internal power generation circuit to perform a stable operation and, also, suppress power consumption. A control circuit, a row/column decoder and a sense amplifier are driven by an internal buck voltage. On the other hand, a data path with high power consumption is driven by an external power supply voltage. A level conversion circuit receives an address signal or a command signal having a voltage level of the external power supply voltage, converts the voltage level to the internal buck voltage, and outputs a resultant signal to the control circuit. A level conversion circuit receives a control signal having a voltage level of the internal buck voltage from the control circuit, converts the voltage level to the external power supply voltage, and outputs a resultant signal to the data path.
公开/授权文献
- US20070047365A1 Semiconductor device 公开/授权日:2007-03-01
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